Peer-reviewed publications:


  • "Modal analysis of resonant and non-resonant optical response in semiconductor nanowire arrays." Dagyte, V. and N. Anttu (2019). Nanotechnology 30(2). DOI: 10.1088/1361-6528/aaea26
  •  "Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)." Bologna, N., S. Wirths, L. Francaviglia, M. Campanini, H. Schmid, V. Theofylaktopoulos, K. E. Moselund, A. F. I. Morral, R. Erni, H. Riel and M. D. Rossell (2018). Acs Applied Materials & Interfaces 10(38): 32588-32596. DOI: 10.1021/acsami.8b10770
  • "Growth kinetics of GaxIn(1-x)P nanowires using triethylgallium as Ga precursor." Dagyte, V., M. Heurlin, X. L. Zeng and M. T. Borgstrom (2018). Nanotechnology 29(39). DOI: 10.1088/1361-6528/aad1d2
  • "n-type doping and morphology of GaAs nanowires in Aerotaxy." Metaferia, W., S. Sivakumar, A. R. Persson, I. Geijselaers, L. R. Wallenberg, K. Deppert, L. Samuelson and M. H. Magnusson (2018). Nanotechnology 29(28). DOI: 10.1088/1361-6528/aabec0
  • "Electron Tomography Reveals the Droplet Covered Surface Structure of Nanowires Grown by Aerotaxy." Persson, A. R., W. Metaferia, S. Sivakumar, L. Samuelson, M. H. Magnusson and R. Wallenberg (2018). Small 14(33). DOI: 10.1002/smll.201801285
  • "Nanoscale investigation of a radial p-n junction in self-catalyzed GaAs nanowires grown on Si (111)." Piazza, V., M. Vettori, A. A. Ahmed, P. Lavenus, F. Bayle, N. Chauvin, F. H. Julien, P. Regreny, G. Patriarche, A. Fave, M. Gendry and M. Tchernycheva (2018). Nanoscale 10(43): 20207-20217. DOI: 10.1039/c8nr03827a
  • Towards Nanowire Tandem Junction Solar Cells on Silicon. Magnus T. Borgstrom, Martin H. Magnusson, Frank Dimroth, Gerald Siefer, Oliver Hohn, Heike Riel, Heinz Schmid, Stephan Wirths, Mikael Bjork, Ingvar Aberg, Willie Peijnenburg, Martina Vijver, Maria Tchernycheva, Valerio Piazza, Lars Samuelson
    IEEE Journal of Photovoltaics 8 (3) May 2018. DOI: 10.1109/JPHOTOV.2018.2816264
  • III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration. Cariou, R., J. Benick, F. Feldmann, O. Höhn, H. Hauser, P. Beutel, N. Razek, M. Wimplinger, B. Bläsi, D. Lackner, M. Hermle, G. Siefer, S. W. Glunz, A. W. Bett and F. Dimroth. Nature Energy (2018) DOI:10.1038/s41560-018-0125-0
  • Green and Clean: Reviewing the Justification of Claims for Nanomaterials from a Sustainability Point of View. Pallas G, Peijnenburg WJGM, Guinée JB, Heijungs R, Vijver MG.
    Sustainability. 2018; 10(3):689.
  • Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon. Wirths, S.; Mayer, B.F.; Schmid, H.; Sousa, M.; Gooth, J.; Riel, H.; Moselund, K.E.
    ACS Nano, Article ASAP. DOI: 10.1021/acsnano.7b07911
  • GaAs Nanowire pn-Junctions Produced by Low-Cost and High-Throughput Aerotaxy. Barrigón E, Hultin O, Lindgren D, Yadegari F, Magnusson MH, Samuelson L, Johansson LIM, Björk MT.
    Nano Lett. 2018 Feb 14;18(2):1088-1092. DOI: 10.1021/acs.nanolett.7b04609
  • Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-Incidence Response in the Long-Wavelength Infrared. Karimi, Mohammad; Heurlin, Magnus; Limpert, Steven; et al.
    NANO LETTERS 18 (1) 365-372,  JAN 2018
    DOI: 10.1021/acs.nanolett.7b04217
  • Electrical and optical evaluation of n-type doping in InxGa(1-x)P nanowires. X. Zeng*, R. T. Mourão*, G. Otnes*, O. Hultin, V. Dagyte, M. Heurlin, and M.T. Borgström
    Nanotechnology 2018, DOI: 10.1088/1361-6528/aabaa5.
  • Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements. Gaute Otnes, Enrique Barrigón, Christian Sundvall, K. Erik Svensson, Magnus Heurlin, Gerald Siefer, Lars Samuelson, Ingvar Åberg, Magnus T. Borgström. Nano Lett., 2018, 18 (5), pp 3038–3046. DOI: 10.1021/acs.nanolett.8b00494





Public documents and reports:

New 2017

Report on realization of integrated light trapping structures into bottom cell. Download report.

Report on optimized particle patterning with redesigned master structures or processing. Download report.

Report on the electrical design of tandem cell. Download report.

Publishable summary of the preliminary life cycle assessment. Download report.



  • Report on adaption of EQE and IV measurement equipment for nanowire solar cells.
    Summary: In this deliverable the work related to the preparation of the set-ups intended for the measurements of the EQE and the light IV curves of the nanowire-Silicon tandem cells to be developed within the project is described. In the case of the EQE measurements this has been mainly related to an adaption of the used bias light illumination via identification and purchase of suitable optical filters. For the light IV measurement work concentrated on the spectrum of the multi-source sun simulator. It turned out that for some potential nanowire-Silicon tandem cells particular blue rich spectra are required. This however could successfully be realized with the simulator at Fraunhofer ISE. In summary it can be stated that the set-ups are now well prepared for the measurement of more or less any potential nanowire-Silicon tandem cell. Download report.
  • Report on the status of the different NIL based techniques.
    Summary: In this deliverable, the work related to the patterning of metal nano-particles as catalyst arrays for the highly defined nanowire growth on III/V substrates is described.
    As patterning technique we are evaluating different nanoimprint lithography (NIL) toolings and processes as well as one alternative technique, namely micro-contact
    printing (μCP). As metallisation technique both physical vapour deposition and electroplating are tested. The quality of the realised catalyst arrays is evaluated first
    using scanning electron microscopy (SEM) and atomic force microscopy (AFM). After the following step of epitaxy (work package 2: III/V nanowire growth), the
    quality of the catalyst arrays is rated with respect to optical properties PL energy and luminescence intensity.
    We reproducibly imprint 2” wafers with Au metal particles in a matrix of 200 nm diameter holes and a hexagonal pitch of 500 nm, optimised for light absorption in InP
    NW arrays. NIL is a working method for large scale economically viable patterning. Download report.



Results achieved 2018 published under Results