- Absorption and transmission of light in III-V nanowire arrays for tandem solar cell applications. Anttu, N., V. Dagyte, X. Zeng, G. Otnes and M. Borgström. Nanotechnology 2017, 28(20). Free full text available at the Journal's site
- Optical analysis of a III-V-nanowire-array-on-Si dual junction solar cell. Chen, Y., O. Hohn, N. Tucher, M. E. Pistol and N. Anttu. Optics Express 2017, 25(16): A665-A679. https://doi.org/10.1364/OE.25.00A665
- Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design. Hultin, O., G. Otnes, L. Samuelson and K. Storm. Nano Letters 2017, 17(2): 1121-1126. http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b04723
- Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors. Karimi, M., V. Jain, M. Heurlin, A. Nowzari, L. Hussain, D. Lindgren, J. E. Stehr, I. A. Buyanova, A. Gustafsson, L. Samuelson, M. T. Borgström and H. Pettersson. Nano Letters 2017, 17(6): 3356-3362. http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b05114
- Towards high efficiency nanowire solar cells. Otnes, G. and M. T. Borgström. Nano Today 2017, 12: 31-45. http://www.sciencedirect.com/science/article/pii/S1748013216303024
- InxGa1-xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc. Otnes, G., M. Heurlin, X. L. Zeng and M. T. Borgström. Nano Letters 2017, 17(2): 702-707. http://pubs.acs.org/doi/10.1021/acs.nanolett.6b03795
- Design for strong absorption in a nanowire array tandem solar cell, Yang Chen, Mats-Erik Pistol and Nicklas Anttu, Scientific Report, 2016; 6: 32349.
doi:10.1038/srep32349 Free full text available at the Journal's site
- Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling, Yang Chen, Pyry Kivisaari, Mats-Erik Pistol and Nicklas Anttu. Nanotechnology, 2016, 27(43): 435404. DOI: 10.1088/0957-4484/27/43/435404
- Connection between modeled blackbody radiation and dipole emission in large-area nanostructures, Nicklas Anttu, Optics Letters, 41 (2016), 1494. https://doi.org/10.1364/OL.41.001494
- Performance of GaAs Nanowire Array Solar Cells for Varying Incidence Angles, Omide Madani Ghahfarokhi, Nicklas Anttu, Lars Samuelson and Ingvar Åberg, IEEE Journal of Photovoltaics, 2016, Online. DOI: 10.1109/JPHOTOV.2016.2604564 Open-Access full-text available at the Journal's site
- Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography. Otnes, G., Heurlin, M., Graczyk, M. et al. Nano Res. (2016). doi:10.1007/s12274-016-1165-z
- InP nanowire p-type doping via Zinc indiffusion. Haggren et al, Journal of Crystal growth 451, 18 http://dx.doi.org/10.1016/j.jcrysgro.2016.06.020
- GaAsP Nanowires Grown by Aerotaxy, W. Metaferia et al., Nano Lett 16, 5701-5707 (2016) DOI: 10.1021/acs.nanolett.6b02367
Public documents and reports:
Report on realization of integrated light trapping structures into bottom cell. Download report.
Report on optimized particle patterning with redesigned master structures or processing. Download report.
Report on the electrical design of tandem cell. Download report.
Publishable summary of the preliminary life cycle assessment. Download report.
- Report on adaption of EQE and IV measurement equipment for nanowire solar cells.
Summary: In this deliverable the work related to the preparation of the set-ups intended for the measurements of the EQE and the light IV curves of the nanowire-Silicon tandem cells to be developed within the project is described. In the case of the EQE measurements this has been mainly related to an adaption of the used bias light illumination via identification and purchase of suitable optical filters. For the light IV measurement work concentrated on the spectrum of the multi-source sun simulator. It turned out that for some potential nanowire-Silicon tandem cells particular blue rich spectra are required. This however could successfully be realized with the simulator at Fraunhofer ISE. In summary it can be stated that the set-ups are now well prepared for the measurement of more or less any potential nanowire-Silicon tandem cell. Download report.
- Report on the status of the different NIL based techniques.
Summary: In this deliverable, the work related to the patterning of metal nano-particles as catalyst arrays for the highly defined nanowire growth on III/V substrates is described.
As patterning technique we are evaluating different nanoimprint lithography (NIL) toolings and processes as well as one alternative technique, namely micro-contact
printing (μCP). As metallisation technique both physical vapour deposition and electroplating are tested. The quality of the realised catalyst arrays is evaluated first
using scanning electron microscopy (SEM) and atomic force microscopy (AFM). After the following step of epitaxy (work package 2: III/V nanowire growth), the
quality of the catalyst arrays is rated with respect to optical properties PL energy and luminescence intensity.
We reproducibly imprint 2” wafers with Au metal particles in a matrix of 200 nm diameter holes and a hexagonal pitch of 500 nm, optimised for light absorption in InP
NW arrays. NIL is a working method for large scale economically viable patterning. Download report.